Samsung has announced the development of the industry’s first DDR5 memory module packing an insane 512 GB of capacity. The memory modules are targeted at AI/ML, exascale hyper-computing, analytics, networking, and other data-intensive workloads.
Samsung DDR5 Memory Modules Pack 512 GB Capacity – Based on HKMG Process Node & Offer Up To 7200 Mb/s Pin Speeds
Samsung states that the 512 GB DDR5 memory modules will expand its existing portfolio to offer the densest capacity ever produced. The memory modules will be featuring the HKMG or High-K Metal Gate process node which was also used by Samsung for the production of its GDDR6 VRAM modules. The process node allows the memory modules to use 13% lower power & also reduces power leakages.
In terms of specifications, the Samsung 512 GB DDR5 memory offers twice the performance of the DDR4 memory with speeds of up to 7200 Mb/s. The memory features a total of 40 DRAM chips with each DRAM chip featuring eight layers of 16 Gb DRAM modules stacked together & connected with TSV’s (Through-Silicon-Via).
512GB capacity DDR5 module made possible by an 8-layer TSV structure
HKMG material reduces power by 13 percent while doubling the speed of DDR4
Samsung Electronics, the world leader in advanced memory technology, today announced that it has expanded its DDR5 DRAM memory portfolio with the industry’s first 512GB DDR5 module based on High-K Metal Gate (HKMG) process technology. Delivering more than twice the performance of DDR4 at up to 7,200 megabits per second (Mbps), the new DDR5 will be capable of orchestrating the most extreme compute-hungry, high-bandwidth workloads in supercomputing, artificial intelligence (AI) and machine learning (ML), as well as data analytics applications.
“Samsung is the only semiconductor company with logic and memory capabilities and the expertise to incorporate HKMG cutting-edge logic technology into memory product development,” said Young-Soo Sohn, Vice President of the DRAM Memory Planning/Enabling Group at Samsung Electronics. “By bringing this type of process innovation to DRAM manufacturing, we are able to offer our
By: Hassan Mujtaba
Title: Samsung Develops DDR5 Memory Modules With 512 GB Capacity – Based on High-K Metal Gate Process & Up To 7200 Mb/s
Sourced From: wccftech.com/samsung-develops-ddr5-memory-modules-512-gb-capacity/
Published Date: Thu, 25 Mar 2021 03:21:47 +0000
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